Design goal: Photon Counting CT engineered with Deep Silicon technology to enable advanced CT Imaging
Deep Silicon technology* could allow for the realization of the full potential of photon counting CT oncology, cardiology, neurology, and more.
DESIGN GOALS: ADVANCED CT IMAGING
Photon counting CT technology engineered to enable higher contrast-to noise ratio, improved spatial resolution, and optimized spectral imaging.
TRADITIONAL TECHNOLOGY
Traditional Energy Integrating Detector (EID) lacks specific energy level information of each photon
NEW TECHNOLOGY
Photon counting is engineered to use semiconducting material to help enable the generation of images with more accurate signals and the production of high quality spectral information.
TECHNOLOGY POTENTIAL
Design goals: Engineering a photon counting CT that enables capabilities for improved spectral and spatial resolutions, reduced radiation and enhanced contrast to-noise ratio
GE HealthCare’s unique approach after three decades of R&D: Deep Silicon as the semiconductor material for its intended photon counting CT detector to help clinicians realize the full potential of spectral CT.
The effective depth of the detector is determined not by the thickness of the silicon, but by its length – allowing the detector to have as long an absorption length as necessary. This is why we call it “Deep Silicon.”